Publications:

 

 

1.      H. Kim, G. Glass, S.Y. Park, T. Spila, N. Taylor, J.R. Abelson, and J.E. Greene, “Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si2H6 and B2H6.” Appl. Phys. Lett. 69, 3869, (1996).

2.      H. Kim, N. Taylor, T. Spila, G. Glass, S.Y. Park, J.E. Greene, and J.R. Abelson, “Structure of the Si(011)-(16x2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption.” Surf. Sci. 380, L496 (1997).

3.      H. Kim, G. Glass, T. Spila, N. Taylor, S.Y. Park, J.R. Abelson, and J.E. Greene, “Si(001):B gas-source molecular-beam epitaxy:  Boron surface segregation and its effect on film growth kinetics.” J. Appl. Phys. 82, 2288 (1997).

4.      Q. Lu, M.R. Sardela, N. Taylor, G. Glass, T.R. Bramblett, T. Spila, J.R. Abelson, and J.E. Greene, “B incorporation and hole transport in fully strained heteroepitaxial Si1-xGex grown on Si(001) by gas-source MBE from Si2H6, Ge2H6, and B2H6.” J. Cryst. Growth 179, 97 (1997).

5.      Chinkyo Kim, I.K. Robinson, T. Spila, and J.E. Greene, “Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation.” J. Appl. Phys. 83, 7608 (1998).

6.      N. Taylor, H. Kim, T. Spila, J.A. Eades, G. Glass, P. Desjardins, and J.E. Greene, “Growth of Si1‑xGex(011) on Si(011)16´2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions.” J. Appl. Phys. 85, 501 (1999).

7.      P. Desjardins, T. Spila, O. Gurdal, N. Taylor, and J.E. Greene, “Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge1-xSnx alloys on Ge(001)2´1.” Phys. Rev. B 60, 15993 (1999).

8.      G. Glass, H. Kim, P. Desjardins, N. Taylor, T. Spila, Q. Lu, and J.E. Greene, “Ultrahigh B doping (£1022 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport.” Phys. Rev. B 61, 7628 (2000).

9.      H. Kim, T. Spila and J. E. Greene, “Si(113) hydrogen desorption kinetics: a temperature programmed desorption study.” Surf. Sci. 490, L602 (2001).

10.  T. Spila, P. Desjardins, A. Vailonis, H. Kim, N. Taylor, D.G. Cahill, J.E. Greene, S. Guillon, and R.A. Masut, “Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001).” J. Appl. Phys. 91, 3579 (2002).

11.  D. Gall, C.-S. Shin, T. Spila, M. Odén, M. Senna, J.E. Greene, and I. Petrov, “Growth of single-crystal CrN on MgO(001): Effects of low-energy ion-irradiation on surface morphological evolution and physical properties.” J. Appl. Phys. 91, 3589 (2002).

12.  T. Spila, P. Desjardins, J. D’Arcy-Gall, R.D. Twesten, and J.E. Greene, “Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1‑xGex/Si(001) growth from hydride precursors.” J. Appl. Phys. 93, 1918 (2003).

13.  K.A. Bratland, Y.L. Foo, J.A.N.T. Soares, T. Spila, P. Desjardins, and J.E. Greene, “Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy.” Phys. Rev. B 67, 125322 (2003).

14.  S. Hong, Y.L. Foo, K.A. Bratland, T. Spila, K. Ohmori, M.R. Sardela Jr., J.E. Greene, and E. Yoon, “Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing.” Appl. Phys. Lett. 83, 4321 (2003).

15.  D.W. Moon, H.I. Lee, B. Cho, Y.L. Foo, T. Spila, S. Hong, and J.E. Greene, “Direct measurements of strain depth profiles in Ge/Si(001) nanostructures.” Appl. Phys. Lett. 83, 5298 (2003).

16.  K.A. Bratland, Y.L. Foo, T. Spila, H.-S. Seo, R.T. Haasch, P. Desjardins, and J.E. Greene, “Sn-mediated Ge/Ge(001) growth by low-temperature molecular-beam epitaxy: surface smoothening and enhanced epitaxial thickness.” J. Appl Phys. 97, 044904 (2005).

17.  I.K. Robinson, Y. Da, T. Spila, and J.E. Greene, “Coherent diffraction patterns of individual dislocation strain fields.” J. Phys. D 38, A7 (2005).

18.  B.E. Jurczyk, D.A. Alman, E.L. Antonsen, M.A. Jaworski, M.J. Williams, D.N. Ruzic, T. Spila, G. Edwards, S. Wurm, O. Wood, and R.L. Bristol, “The effect of debris on collector optics, its mitigation and repair: next-step a gaseous Sn EUV DPP source.” Proceedings of the SPIE, 5751, 572 (2005).

19.  D.A. Alman, H. Qiu, K.C. Thompson, E.L. Antonsen, J.B. Spencer, M.R. Hendricks, B.E. Jurczyk, D.N. Ruzic, T. Spila, G. Edwards, S. Wurm, O. Wood, and R. Bristol, “UIUC collector erosion and optical lifetime project results: time dependent exposures.” Proceedings of the SPIE, 5751, 1118 (2005).

20.  H. Qiu, D.A. Alman, K.C. Thompson, M.D. Coventry, J.B. Spencer, M.R. Hendricks, E.L. Antonsen, B.E. Jurczyk, D.N. Ruzic, T.P. Spila, G. Edwards, S. Wurm, O. Wood, and R. Bristol, “Characterization of collector optic material samples before and after exposure in LPP and DPP EUV sources.” Proceedings of the SPIE, 5751, 1211 (2005).

21.  H. Qiu, D.A. Alman, K.C. Thompson, J.B. Spencer, E.K. Antonsen, B.E. Jurczyk, D.N. Ruzic, and T.P. Spila, “Characterization of collector optic material samples before and after exposure in laser produced plasma and discharge produced plasma extreme ultraviolet sources.” J. Microlith., Microfab., Microsyst. 5, 033006 (2006).

22.  J.M. Purswani, T. Spila, and D. Gall, “Growth of epitaxial Cu on MgO(001) by magnetron sputter deposition.” Thin Solid Films 515, 1166 (2006).

23.  B. Cho, J. Bareño, Y.L. Foo, S. Hong, T. Spila, I. Petrov, and J.E. Greene, “Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology.” J. Appl Phys. 103, 123530 (2008).

24.  D.P. Abraham, T. Spila, M.M. Furczon, and E. Sammann, “Evidence of Transition-Metal Accumulation on Aged Graphite Anodes by SIMS.” Electrochemical and Solid-State Letters 11, A226 (2008).